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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 31 mOhm @ 21A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 68W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| AD8601DRTZ-R2 | ANALOG DEVICES |
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| AD8601DRTZ-R2 |
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77.60 | ||||||
| AD8601DRTZ-R2 | ANALOG DEVICES |
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| AD8601DRTZ-R2 | 4-7 НЕДЕЛЬ | 406 |
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IRFBC30AS | INTERNATIONAL RECTIFIER |
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IRFBC30AS | VISHAY |
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IRFBC30AS | 1 | 147.42 | |||||
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IRFBC30AS | INTERNATIONAL RECTIFIER |
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IRFBC30AS | Vishay/Siliconix |
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IRFBC30AS | 1 |
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| VS-90SQ045 | VISHAY |
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