|
|
Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 76A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 140nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 5000pF @ 25V |
| Power - Max | 63W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220AB Full-Pak |
|
IRLI3803 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
|