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Версия для печати
| Температурный коэфициент | C0G |
| Номинальное напряжение | 50 В |
| Емкость | 1000 пФ |
| Серия | GRM |
| Корпус (размер) | 1206 |
| Тип монтажа | Поверхностный |
| Тип | Керамический |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Допустимые отклонения емкости | ±5% |
| Tolerance | ±5% |
| Рабочая температура | -55°C ~ 125°C |
| Сфера применения | General Purpose |
| Size / Dimension | 0.126" L x 0.063" W (3.20mm x 1.60mm) |
| Thickness | 0.037" (0.95mm) |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| LM3671MF-3.3 | NATIONAL SEMICONDUCTOR |
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| LM3671MF-3.3 |
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| LM3671MF-3.3 | NSC |
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| LM3671MF-3.3 | США |
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| LM3671MF-3.3 | СОЕДИНЕННЫЕ ШТА |
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| LM3671MF-3.3 |
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| LM3671MF-3.3 | TEXAS |
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| LM3671MF-3.3 | TEXAS INSTRUMENTS |
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| LM3671MF-3.3 | 1 |
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| LM3671MF-3.3 | 4-7 НЕДЕЛЬ | 87 |
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| MMBZ15VALT1G | NXP |
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| MMBZ15VALT1G | ON Semiconductor | 1 | 5.02 | |||||
| MMBZ15VALT1G | ON SEMICONDUCTOR | 2 892 |
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| MMBZ15VALT1G | 165 | 10.08 | ||||||
| MMBZ15VALT1G | ONS |
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| MMBZ15VALT1G | YOUTAI | 5 444 | 1.93 | |||||
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MMBZ5V6ALT1G | ON SEMICONDUCTOR |
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MMBZ5V6ALT1G | 3 | 15.12 | |||||
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MMBZ5V6ALT1G | ON SEMICONDUCTOR | 9 836 |
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MMBZ5V6ALT1G | ONS |
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MMBZ5V6ALT1G | ON SEMIC |
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MMBZ5V6ALT1G | YOUTAI | 6 264 | 4.32 | ||||
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MMBZ5V6ALT1G | UMW-YOUTAI |
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MMBZ5V6ALT1G | UMW |
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MMBZ5V6ALT1G | 1 |
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| NCP1521BSNT1G | ONS |
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| NCP1521BSNT1G | ON SEMICONDUCTOR |
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| NCP1521BSNT1G | ON SEMICONDUCTOR |
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| NCP1521BSNT1G |
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| NCP1521BSNT1G | ONS-FAIR |
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| NCP1521BSNT1G | 4-7 НЕДЕЛЬ | 456 |
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| TL431AQDBZR.215 | NXP |
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| TL431AQDBZR.215 | NEX-NXP | 1 | 22.40 | |||||
| TL431AQDBZR.215 |
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