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Корпус | TO-247-3 |
Корпус (размер) | TO-247-3 |
Тип монтажа | Выводной |
Power - Max | 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
Current - Collector Cutoff (Max) | 200µA |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1.6A, 4.5A |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Current - Collector (Ic) (Max) | 8A |
Transistor Type | NPN |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BU508AW (Мощные биполярные транзисторы) Silicon Diffused Power Transistor
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1206 - 22 ОМ 5% RC1206JR-0722RL (RS-06K220JT) | FENGHUA |
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IRFL014TR |
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Транзистор MOSFET | VISHAY |
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IRFL014TR |
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Транзистор MOSFET | SILICONIX |
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IRFL014TR |
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Транзистор MOSFET | INTERNATIONAL RECTIFIER | 248 | 16.80 | |||
IRFL014TR |
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Транзистор MOSFET | INTERNATIONAL RECTIFIER |
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IRFL014TR |
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Транзистор MOSFET | SILICONIX | 275 |
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IRFL014TR |
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Транзистор MOSFET | Vishay/Siliconix |
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IRFL014TR |
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Транзистор MOSFET | МАЛАЙЗИЯ |
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IRFL014TR |
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Транзистор MOSFET | 1 | 65.52 | ||||
IRFL014TR |
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Транзистор MOSFET | VBSEMI |
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LM358AM | FAIR |
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LM358AM | NATIONAL SEMICONDUCTOR |
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LM358AM | FAIRCHILD |
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LM358AM | NSC |
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LM358AM | FAIRCHILD | 28 |
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LM358AM | NATIONAL SEMICONDUCTOR | 29 |
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LM358AM | Fairchild Semiconductor |
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LM358AM | 39 |
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LM358AM | FULIHAO TECH | 4 | 8.27 | ||||
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LM358AM | FULIHAO | 2 844 | 4.24 | ||||
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LM358AM | 4-7 НЕДЕЛЬ | 103 |
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MC79M15CT | ON SEMICONDUCTOR |
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MC79M15CT |
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37.72 | |||||
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MC79M15CT | ON SEMICONDUCTOR |
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MC79M15CT | 4-7 НЕДЕЛЬ | 369 |
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RGP02-16E-E3/54 |
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Vishay/General Semiconductor |
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RGP02-16E-E3/54 |
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GENERAL SEMICONDUCTOR |
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RGP02-16E-E3/54 |
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VISHAY |
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RGP02-16E-E3/54 |
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Корзина
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