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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | SIPMOS® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 1.17A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.17A |
| Vgs(th) (Max) @ Id | 2V @ 160µA |
| Gate Charge (Qg) @ Vgs | 7.8nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |