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 Версия для печати
Версия для печати
                        
                        
                    
                                | FET Feature | Logic Level Gate | 
| FET Type | MOSFET P-Channel, Metal Oxide | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 4.5V | 
| Drain to Source Voltage (Vdss) | 12V | 
| Current - Continuous Drain (Id) @ 25° C | 1.52A | 
| Vgs(th) (Max) @ Id | 600mV @ 1mA | 
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V | 
| Input Capacitance (Ciss) @ Vds | 500pF @ 9.6V | 
| Power - Max | 417mW | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | SC-74, SOT-457 | 
| Корпус | 6-TSOP | 
| BSH207 (MOSFET) P-channel enhancement mode MOS transistor 
                                        Производитель: 
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