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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 14A, 7V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 100nC @ 7V |
| Input Capacitance (Ciss) @ Vds | 3520pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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IRF7484 (Дискретные сигналы) Hexfet Power Mosfet
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER | 40 | 89.79 | |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W |
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59.68 | ||
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | КИТАЙ |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INFINEON |
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| MAX8725ETI | MAXIM |
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| MAX8725ETI |
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273.00 | ||||||
| MAX8725ETI | 4-7 НЕДЕЛЬ |
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SI4336DY-T1 | SILICONIX |
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SI4336DY-T1 | VISHAY |
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SI4336DY-T1 |
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542.00 | |||||
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SI4336DY-T1 | SILICONIX | 15 |
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| SI4392DY | SILICONIX |
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| SI4392DY | SILICONIX |
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| U2270B-MFPY |
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Read / Write Base Station IC | ATMEL |
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| U2270B-MFPY |
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Read / Write Base Station IC |
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422.48 | ||||
| U2270B-MFPY |
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Read / Write Base Station IC | ATMEL CORPORATION |
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| U2270B-MFPY |
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Read / Write Base Station IC | MICRO CHIP |
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| U2270B-MFPY |
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Read / Write Base Station IC | 4-7 НЕДЕЛЬ |
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