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Версия для печати
| Корпус | TO-264 [L] |
| Корпус (размер) | TO-264 |
| Тип монтажа | Выводной |
| Power - Max | 520W |
| Input Capacitance (Ciss) @ Vds | 7900pF @ 25V |
| Gate Charge (Qg) @ Vgs | 500nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 500mA, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | POWER MOS V® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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APT10050LVR (Мощные полевые МОП транзисторы) Power MOSV isA new generation of high voltage N-Channel enhancement mode power MOSFETs
Производитель:
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