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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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MICRO SEMICONDUCTOR
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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FAIR
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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TAIWAN SEMICONDUCTOR
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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DC COMPONENTS
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8 725
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6.36
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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ST MICROELECTRONICS
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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RFE INTERNATIONAL
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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SMK
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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FAIRCHILD
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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RF ELECT/RFE INTERNATIONAL
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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FAIRCHILD
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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RF ELECT./RFE INTERNATIONAL
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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TAIWAN SEMICONDUCTOR MANF.
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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Fairchild Semiconductor
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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STMicroelectronics
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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ТАЙВАНЬ(КИТАЙ)
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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КИТАЙ
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800
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10.93
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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YJ
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1 009
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8.87
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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7 856
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3.75
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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KINGTRONICS
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44
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4.65
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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ONS
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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GOOD-ARK
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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MIC
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23
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5.58
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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YANGJIE
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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YANGJIE (YJ)
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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KLS
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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YANGZHOU YANGJIE
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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KEEN SIDE
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944
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2.70
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1N5821 |
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Диод Шоттки (U=30V, I=3.0A, Vf=0.50V@I=3.0A, Vf=0.90V@I=9.4A, -50 to +125C)
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6567
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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12.49
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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16 585
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5.82
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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1 334
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3.76
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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13 688
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1.07
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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116
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1.28
>100 шт. 0.64
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 576
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1.07
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ASEMI
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3 395
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2.00
>100 шт. 1.00
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEEN SIDE
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MERRYELC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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RUME
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480
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1.42
>100 шт. 0.71
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CF-0.25-5.1K 5% |
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Резистор углеродистый
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CHINA
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CF-0.25-5.1K 5% |
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Резистор углеродистый
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1.32
>500 шт. 0.44
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CF-0.25-68 5% |
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Резистор углеродистый
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CHINA
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CF-0.25-68 5% |
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Резистор углеродистый
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0.84
>500 шт. 0.28
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TRB1-12VDC-SA-CD-R |
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TTI
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TRB1-12VDC-SA-CD-R |
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TS
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TRB1-12VDC-SA-CD-R |
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TRB1-12VDC-SA-CD-R |
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TAI SHING
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