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Версия для печати
| Gate Charge (Qg) @ Vgs | 58nC @ 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 61A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 37A, 7V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 15V |
| Power - Max | 89W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |