IRFR2405
Hexfet power mosfets discrete n-channel
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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 34A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 56A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2430pF @ 25V |
| Power - Max | 110W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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IRFR2405 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 61 102 | 1.02 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 329 499 | 1.48 | ||
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1N4007 |
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DIOTEC | 71 806 | 2.87 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 186 464 | 1.43 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 879 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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2 128 | 3.70 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 27 | 1.59 | ||
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1N4007 |
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HOTTECH | 3 535 | 1.48 | ||
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1N4007 |
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KLS |
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1N4007 |
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YS | 2 311 | 1.38 | ||
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1N4007 |
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YANGJIE | 35 864 | 1.52 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 41 663 | 1.23 | ||
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1N4007 |
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TWGMC | 28 247 |
1.50 >500 шт. 0.50 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 1.71 | ||
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1N4007 |
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ASEMI | 1 |
1.52 >100 шт. 0.76 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 365 522 |
1.14 >100 шт. 0.57 |
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1N4007 |
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MERRYELC | 212 786 | 1.61 | ||
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1N4007 |
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 550 640 |
1.42 >100 шт. 0.71 |
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1N4007 |
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71682 | 8 | 1.06 | ||
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BTS452R | INFINEON |
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BTS452R |
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192.00 | |||||
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BTS452R | Infineon Technologies |
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BTS452R | INFINEON TECH |
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BTS452R | 4-7 НЕДЕЛЬ | 508 |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INTERNATIONAL RECTIFIER |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | 3 648 | 22.86 | ||
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INTERNATIONAL RECTIFIER | 6 |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INFINEON |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | IR/VISHAY |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | SLKOR | 8 180 | 15.88 | |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | JSMICRO | 3 834 | 25.77 | |
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IRFR5305 |
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Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | EVVO | 5 309 | 16.73 | |
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TLE4264G | INFINEON | 1 488 | 63.60 | ||||
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TLE4264G |
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147.60 | |||||
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TLE4264G | Infineon Technologies |
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TLE4264G | INFINEON |
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TLE4264G | INFINEON TECH |
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TLE4264G | SIEMENS |
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TLE4264G | 4-7 НЕДЕЛЬ | 638 |
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TLE4264G | 1860 |
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| VN920B5-E | ST MICROELECTRONICS |
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| VN920B5-E | STMicroelectronics |
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| VN920B5-E |
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| VN920B5-E | ST MICROELECTRONICS SEMI | 41 |
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