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Версия для печати
| Input Capacitance (Ciss) @ Vds | 260pF @ 25V |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 4.8A |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 2.9A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |