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 Версия для печати
Версия для печати
                        
                        
                    
                                | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Серия | HEXFET® | 
| FET Type | 2 N-Channel (Dual) | 
| FET Feature | Logic Level Gate | 
| Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 7.8A, 10V | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25° C | 7.8A, 8.9A | 
| Vgs(th) (Max) @ Id | 2.25V @ 25µA | 
| Gate Charge (Qg) @ Vgs | 6.9nC @ 4.5V | 
| Input Capacitance (Ciss) @ Vds | 600pF @ 15V | 
| Power - Max | 2W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) | 
| Корпус | 8-SO |