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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BAV99S |
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PHILIPS
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BAV99S |
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NXP
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BAV99S |
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INFINEON
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BAV99S |
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PHILIPS
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661
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BAV99S |
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22 560
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3.20
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BAV99S |
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NXP
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2 787
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BAV99S |
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INFINEON
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248
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BAV99S |
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NEX-NXP
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BAV99S |
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HOTTECH
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2 792
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1.71
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BAV99S |
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JSCJ
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112 224
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2.15
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BAV99S |
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KEEN SIDE
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9 440
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1.48
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BAV99T-7 |
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DIODES
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BAV99T-7 |
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DIODES INC.
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3 294
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BAV99T-7 |
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Diodes Inc
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BAV99W |
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(SMD) PBF SOT323
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NXP
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BAV99W |
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(SMD) PBF SOT323
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127 916
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1.94
>100 шт. 0.97
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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25
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1.61
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BAV99W |
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(SMD) PBF SOT323
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DC COMPONENTS
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19 170
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2.52
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BAV99W |
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(SMD) PBF SOT323
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NXP
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4 241
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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5 020
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BAV99W |
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(SMD) PBF SOT323
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PHI
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BAV99W |
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(SMD) PBF SOT323
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HOTTECH
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19 341
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2.00
>100 шт. 1.00
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BAV99W |
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(SMD) PBF SOT323
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PANJIT
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BAV99W |
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(SMD) PBF SOT323
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SEMTECH
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BAV99W |
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(SMD) PBF SOT323
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SUNTAN
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12
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2.39
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BAV99W |
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(SMD) PBF SOT323
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INFINEON TECH
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BAV99W |
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(SMD) PBF SOT323
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV99W |
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(SMD) PBF SOT323
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NEXPERIA
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BAV99W |
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(SMD) PBF SOT323
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DIOTEC
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2 838
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1.21
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BAV99W |
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(SMD) PBF SOT323
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KLS
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BAV99W |
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(SMD) PBF SOT323
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1
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BAV99W |
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(SMD) PBF SOT323
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JSCJ
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19 200
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1.74
>100 шт. 0.87
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BAV99W |
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(SMD) PBF SOT323
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XSEMI
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9 240
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1.86
>100 шт. 0.93
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BAV99W |
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(SMD) PBF SOT323
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KEEN SIDE
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20 151
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1.76
>100 шт. 0.88
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BAV99W |
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(SMD) PBF SOT323
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NXP(PHILIPS)
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32
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1.16
>100 шт. 0.58
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BAV99W-7 |
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DIODES
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BAV99W-7 |
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DIODES INC.
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480
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BAV99W-7 |
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Diodes Inc
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BAV99WT1 |
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ON SEMICONDUCTOR
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BAV99WT1 |
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OMNI SEMICONDUCTORS
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BAV99WT1 |
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BAV99WT1 |
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OMNI SEMICONDUCTORS
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BAV99WT1 |
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ON SEMICONDUCTOR
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1 485
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BAV99WT1 |
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OTHER
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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NXP
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19 673
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2.10
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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PHILIPS
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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NATIONAL SEMICONDUCTOR
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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PANJIT
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208
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1.49
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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FAIR
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BAW56 |
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2 импульсных диода (общий анод, Vr=80V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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GENERAL SEMICONDUCTOR
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