| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
 |
 |
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
SUNTAN
|
166 683
|
1.48
>100 шт. 0.74
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
PHILIPS SEMIC
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
КИТАЙ
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
INFINEON TECH
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
DIODES INC
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
|
110 357
|
1.36
>100 шт. 0.68
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
KINGTRON
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
GALAXY ME
|
646
|
1.10
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
HOTTECH
|
202 022
|
1.45
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
LRC
|
1 920
|
2.07
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
SEMTECH
|
36 637
|
1.43
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
YJ
|
215 780
|
1.15
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
RUME
|
|
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
TRR ELECTRONICS
|
277
|
1.22
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
NEXPERIA
|
38 436
|
1.37
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO
|
16
|
1.94
>100 шт. 0.97
|
|
|
|
|
BC857C |
|
Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
|
XXW
|
39 744
|
1.44
>100 шт. 0.72
|
|
|
|
|
2N6488 |
|
Транзистор NPN 80V 15A 75W B:20-150
|
|
|
104.00
|
|
|
|
|
2N6488 |
|
Транзистор NPN 80V 15A 75W B:20-150
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
2SA1124 |
|
Транзистор S-P 150В 0.05A TO92
|
MATSUSHITA
|
|
|
|
|
|
|
2SA1127 |
|
|
TOSHIBA
|
|
|
|
|
|
|
2SA1242 |
|
|
TOSHIBA
|
|
|
|
|
|
|
2SA1534AS |
|
|
MATSUSHITA
|
|
|
|
|
|
|
2SA1767 |
|
|
MATSUSHITA
|
|
|
|
|
|
|
2SB1237 |
|
Si-P, 40V, 1A, 1W, 150MHz
|
ROHM
|
|
|
|
|
|
|
2SB1326 |
|
|
ROHM
|
|
|
|
|
|
|
2SC2594 |
|
Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
|
MATSUSHITA
|
8
|
43.47
|
|
|
|
|
2SC2594 |
|
Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
|
|
|
15.96
|
|
|
|
|
2SC2594 |
|
Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
|
Panasonic - SSG
|
|
|
|
|
|
|
2SC2632 |
|
|
MATSUSHITA
|
|
|
|
|
|
|
2SC536 |
|
|
SANYO
|
|
|
|
|
|
|
2SC536 |
|
|
NO TRADEMARK
|
|
|
|
|
|
|
2SC536 |
|
|
|
|
|
|
|
|
|
2SC536 |
|
|
|
|
|
|
|
|
|
2SD1863 |
|
|
|
|
|
|
|
|
|
2SD1992 |
|
|
MATSUSHITA
|
|
|
|
|
|
|
2SD1992 |
|
|
MAT
|
|
|
|
|
|
|
2SD1994AS |
|
|
MATSUSHITA
|
|
|
|
|
|
|
2SD2025 |
|
Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
|
ROHM
|
|
|
|
|
|
|
2SD2025 |
|
Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
|
|
|
57.48
|
|
|
|
|
2SD2025 |
|
Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
|
Rohm Semiconductor
|
|
|
|
|
|
|
BC557B.412 |
|
|
NXP
|
|
|
|
|
|
|
BC557C.112 |
|
|
NXP
|
|
|
|
|
|
|
BC857B.235 |
|
|
NXP
|
|
|
|
|
|
|
BC857B.235 |
|
|
NEX-NXP
|
|
|
|
|
|
|
MJ15024G |
|
Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MJ15024G |
|
Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
|
|
1
|
529.20
|
|
|
|
|
MJ15024G |
|
Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
|
ONS
|
80
|
662.11
|
|
|
|
|
MJ15024G |
|
Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
|
ГЕРМАНИЯ
|
|
|
|
|
|
|
MJ15024G |
|
Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
|
ON SEMICONDUCTO
|
|
|
|
|
