Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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LM4871LD |
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116.32 | |||||
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LM4871LD | 4-7 НЕДЕЛЬ | 771 |
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LM4871M | NATIONAL SEMICONDUCTOR |
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LM4871M | NATIONAL SEMICONDUCTOR |
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LM4871M |
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78.32 | |||||
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LM4871M | NSC |
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LM4871M | США |
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LM4871M | СОЕДИНЕННЫЕ ШТА |
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LM4871M | TEXAS INSTRUMENTS |
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LM4871M | 4-7 НЕДЕЛЬ | 25 |
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LM4890M | NATIONAL SEMICONDUCTOR |
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LM4890M | NATIONAL SEMICONDUCTOR |
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LM4890M |
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106.16 | |||||
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LM4890M | 4-7 НЕДЕЛЬ | 192 |
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LM4935RL | NATIONAL SEMICONDUCTOR |
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LM4935RL |
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549.32 | ||||||
LM4935RL | NSC |
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LM4935RL | ТАЙВАНЬ (КИТАЙ) |
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LM4935RL | ТАЙВАНЬ(КИТАЙ) |
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LM4935RL | 4-7 НЕДЕЛЬ | 417 |
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SSM2019BN | ANALOG DEVICES |
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SSM2019BN |
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353.32 | |||||
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SSM2019BN | ANALOG DEVICES |
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SSM2019BN | 4-7 НЕДЕЛЬ | 148 |
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SSM2211S | ANALOG DEVICES |
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SSM2211S | 35 | 29.44 | |||||
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SSM2211S | 4-7 НЕДЕЛЬ | 639 |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ST MICROELECTRONICS |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | SGS |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 |
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34.60 | |||
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | UTC |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | SGS THOMSON |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ST MICROELECTRONICS SEMI |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | STMicroelectronics |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ТАЙВАНЬ (КИТАЙ) |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ТАЙВАНЬ(КИТАЙ) |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ST1 |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | ST MICROELECTRO |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | 1 |
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TBA820M |
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ИМС УНЧ 2Вт DIP8 | 4-7 НЕДЕЛЬ | 678 |
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | ST MICROELECTRONICS |
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | ОРБИТА | 40 | 43.47 | |
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | 60 | 83.16 | ||
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | ST MICROELECTRO |
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | 1 |
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TDA2006 |
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УHЧ 12W (2x12V/4 Ом) | 4-7 НЕДЕЛЬ | 615 |
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TDA2009A |
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УHЧ 2х12.5W (24V/4 Ом) | ST MICROELECTRONICS | 40 | 158.76 | |
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TDA2009A |
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УHЧ 2х12.5W (24V/4 Ом) | ОРБИТА | 80 | 143.64 | |
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TDA2009A |
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УHЧ 2х12.5W (24V/4 Ом) | 16 | 350.28 | ||
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TDA2009A |
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УHЧ 2х12.5W (24V/4 Ом) | STMicroelectronics |
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