| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
|
6
|
136.08
|
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
Microchip Technology
|
|
|
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
США
|
|
|
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
СОЕДИНЕННЫЕ ШТА
|
|
|
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
1
|
|
|
|
|
|
|
93LC86C-I/P |
|
Память EEPROM serial Microwire 16K
|
4-7 НЕДЕЛЬ
|
589
|
|
|
|
|
|
AT24C256B-PU |
|
EEPROM ser 2-Wire 32Kx8 -40+85C
|
ATMEL
|
|
|
|
|
|
|
AT24C256B-PU |
|
EEPROM ser 2-Wire 32Kx8 -40+85C
|
|
|
107.44
|
|
|
|
|
AT24C256B-PU |
|
EEPROM ser 2-Wire 32Kx8 -40+85C
|
ATMEL CORPORATION
|
|
|
|
|
|
|
AT24C256B-PU |
|
EEPROM ser 2-Wire 32Kx8 -40+85C
|
4-7 НЕДЕЛЬ
|
634
|
|
|
|
|
|
AT29C256-90JC |
|
|
ATMEL
|
|
|
|
|
|
|
AT29C256-90JC |
|
|
ATMEL CORPORATION
|
|
|
|
|
|
|
CY62177DV30LL-55BAXI |
|
|
CYPRESS
|
|
|
|
|
|
|
CY62177DV30LL-55BAXI |
|
|
Cypress Semiconductor Corp
|
|
|
|
|
|
|
CY62177DV30LL-55BAXI |
|
|
CYPRESS
|
|
|
|
|
|
|
CY62177DV30LL-55BAXI |
|
|
|
4
|
|
|
|
|
|
CY7C1021CV33-12VC |
|
|
CYPRESS
|
|
|
|
|
|
|
CY7C1021CV33-12VC |
|
|
CYPRESS
|
20
|
|
|
|
|
|
CY7C1021CV33-12VC |
|
|
Cypress Semiconductor Corp
|
|
|
|
|
|
|
K6R4016V1D-UI10T00 |
|
|
SAMSUNG
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
ST MICROELECTRONICS
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
|
149
|
462.50
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
ST1
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
STMicroelectronics
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
ST MICROELECTR
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
СИНГАПУР
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
SGS THOMSON
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
ST MICROELECTRO
|
|
|
|
|
|
M27C4001-10F1 |
|
Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
|
4-7 НЕДЕЛЬ
|
724
|
|
|
|
|
|
BR24L04FJ-WE2 |
|
|
ROHM
|
|
|
|
|
|
|
BR24L04FJ-WE2 |
|
|
|
|
20.00
|
|
|
|
|
BR24L04FJ-WE2 |
|
|
Rohm Semiconductor
|
|
|
|
|
|
|
BR24L04FJ-WE2 |
|
|
4-7 НЕДЕЛЬ
|
661
|
|
|
|
|
|
W24258S-70LE |
|
|
|
|
150.00
|
|
|
|
|
W24258S-70LE |
|
|
4-7 НЕДЕЛЬ
|
38
|
|
|
|
|
|
CY7C194BN-15VC |
|
|
|
|
2 240.00
|
|
|
|
|
CY7C194BN-15VC |
|
|
Cypress Semiconductor Corp
|
|
|
|
|
|
|
CY7C194BN-15VC |
|
|
4-7 НЕДЕЛЬ
|
659
|
|
|
|
|
|
AT88SC25616C-SU |
|
IC CRYPTOMEM SEEPROM 256K
|
|
|
272.00
|
|
|
|
|
AT88SC25616C-SU |
|
IC CRYPTOMEM SEEPROM 256K
|
Atmel
|
|
|
|
|
|
|
AT88SC25616C-SU |
|
IC CRYPTOMEM SEEPROM 256K
|
4-7 НЕДЕЛЬ
|
137
|
|
|
|
|
|
IS62C1024AL-35TLI |
|
|
INTEGRATED SILICON SOLUTION
|
|
|
|
|
|
|
IS62C1024AL-35TLI |
|
|
|
|
|
|
|
|
|
IS62C1024AL-35TLI |
|
|
ISSI, Integrated Silicon Solution Inc
|
|
|
|
|
|
|
IS62C1024AL-35TLI |
|
|
ISSI
|
|
|
|
|
|
|
IS62C1024AL-35TLI |
|
|
4-7 НЕДЕЛЬ
|
175
|
|
|
|
|
|
CY7C1515KV18-300BZXC |
|
|
|
|
|
|
|
|
|
CY7C1515KV18-300BZXC |
|
|
Cypress Semiconductor Corp
|
|
|
|
|
|
|
CY7C1515KV18-300BZXC |
|
|
4-7 НЕДЕЛЬ
|
499
|
|
|