| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
|
IDT7142LA55J |
|
|
IDT
|
|
|
|
|
|
|
IDT7142LA55J |
|
|
IDT, Integrated Device Technology Inc
|
|
|
|
|
|
 |
IS61LV5128AL-10TI |
|
|
INTEGRATED SILICON SOLUTION
|
|
|
|
|
|
|
IS61LV5128AL-10TI |
|
|
INTEGRATED SILICON SOLUTION
|
|
|
|
|
|
|
IS61LV5128AL-10TI |
|
|
ISSI, Integrated Silicon Solution Inc
|
|
|
|
|
|
|
M5M5V208AKV-70HW |
|
|
MITSUBISHI
|
|
|
|
|
|
|
PC28F128P30B85 |
|
|
INTEL
|
|
|
|
|
|
|
PC28F128P30B85 |
|
|
INTEL
|
|
|
|
|
|
|
PC28F128P30B85 |
|
|
|
|
|
|
|
|
|
PC28F128P30B85 |
|
|
4-7 НЕДЕЛЬ
|
163
|
|
|
|
|
|
24LC08BT-I/SN |
|
EEPROM ser 2,5V 4x256x8
|
MICRO CHIP
|
3 024
|
23.74
|
|
|
|
|
24LC08BT-I/SN |
|
EEPROM ser 2,5V 4x256x8
|
Microchip Technology
|
|
|
|
|
|
|
24LC08BT-I/SN |
|
EEPROM ser 2,5V 4x256x8
|
MICRO CHIP
|
1 368
|
|
|
|
|
|
24LC08BT-I/SN |
|
EEPROM ser 2,5V 4x256x8
|
|
|
|
|
|
|
|
74F189PC |
|
|
NATIONAL SEMICONDUCTOR
|
|
|
|
|
|
|
74F189PC |
|
|
|
|
|
|
|
|
|
74F189PC |
|
|
Fairchild Semiconductor
|
|
|
|
|
|
|
74F189PC |
|
|
|
|
|
|
|
|
|
74F189PC |
|
|
NSC
|
8
|
117.18
|
|
|
|
|
74F189PC |
|
|
4-7 НЕДЕЛЬ
|
541
|
|
|
|
|
|
SST49LF008A-33-4C-NHE-T |
|
|
SST
|
|
|
|
|
|
|
SST49LF008A-33-4C-NHE-T |
|
|
Microchip Technology
|
|
|
|
|
|
|
SST49LF008A-33-4C-NHE-T |
|
|
SILICON STORAGE TECHNOLOGY
|
|
|
|
|
|
|
IDT71V416L10PHG |
|
Статическая память (SRAM) (4M (256k x 16 bit), V=3 to 3.6V, 10ns, T=0 to 70C)
|
|
|
1 360.00
|
|
|
|
|
IDT71V416L10PHG |
|
Статическая память (SRAM) (4M (256k x 16 bit), V=3 to 3.6V, 10ns, T=0 to 70C)
|
IDT, Integrated Device Technology Inc
|
|
|
|
|
|
|
IDT71V416L10PHG |
|
Статическая память (SRAM) (4M (256k x 16 bit), V=3 to 3.6V, 10ns, T=0 to 70C)
|
IDT
|
|
|
|
|
|
|
IDT71V416L10PHG |
|
Статическая память (SRAM) (4M (256k x 16 bit), V=3 to 3.6V, 10ns, T=0 to 70C)
|
4-7 НЕДЕЛЬ
|
68
|
|
|
 |
|
25LC160A-I/P |
|
EEPRM, 16K, Ind
|
MICRO CHIP
|
|
|
|
|
|
|
25LC160A-I/P |
|
EEPRM, 16K, Ind
|
Microchip Technology
|
|
|
|
|
|
|
25LC160A-I/P |
|
EEPRM, 16K, Ind
|
|
|
|
|
|
|
|
25LC160A-I/P |
|
EEPRM, 16K, Ind
|
MICRO CHIP
|
308
|
|
|
|
|
|
25LC160A-I/P |
|
EEPRM, 16K, Ind
|
4-7 НЕДЕЛЬ
|
96
|
|
|
|
|
|
BS62LV1027SIP70 |
|
Статическая память (SRAM) (128K x 8 bit, 70ns, Vcc=2.4-5.5V, Vdr=1.5V(min), Isb
|
BRILLIANCE SEMICONDUCTOR
|
|
|
|
|
|
|
M95080-WMN6P |
|
ИМС EEPROM SPI 1kx8
|
|
|
100.00
|
|
|
|
|
M95080-WMN6P |
|
ИМС EEPROM SPI 1kx8
|
STMicroelectronics
|
|
|
|
|
|
|
M95080-WMN6P |
|
ИМС EEPROM SPI 1kx8
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M95080-WMN6P |
|
ИМС EEPROM SPI 1kx8
|
4-7 НЕДЕЛЬ
|
752
|
|
|
|
|
|
24FC128-I/SN |
|
|
MICRO CHIP
|
135
|
97.50
|
|
|
|
|
24FC128-I/SN |
|
|
|
|
141.24
|
|
|
|
|
24FC128-I/SN |
|
|
Microchip Technology
|
|
|
|
|
|
|
24FC128-I/SN |
|
|
MICRO CHIP
|
25
|
|
|
|
|
|
24FC128-I/SN |
|
|
ТАИЛАНД
|
|
|
|
|
|
|
24FC128-I/SN |
|
|
4-7 НЕДЕЛЬ
|
735
|
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
MICRO CHIP
|
427
|
111.08
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
|
|
45.48
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
Microchip Technology
|
|
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
ТАЙВАНЬ (КИТАЙ)
|
|
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
ТАЙВАНЬ(КИТАЙ)
|
|
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
MICRO CHIP
|
|
|
|
|
|
|
24LC08B-I/P |
|
EEPROM ser 2,5V 4x256x8
|
4-7 НЕДЕЛЬ
|
234
|
|
|
|
