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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КОРЕЯ РЕСПУБЛИК
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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4-7 НЕДЕЛЬ
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198
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M24512-WMW6 |
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ST MICROELECTRONICS
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M24512-WMW6 |
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179.08
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M24512-WMW6 |
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4-7 НЕДЕЛЬ
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277
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M24C02-WBN6 |
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ST MICROELECTRONICS
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187
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95.05
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M24C02-WBN6 |
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30.48
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M24C02-WBN6 |
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STMicroelectronics
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M24C02-WBN6 |
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STMICROELECTR
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M24C02-WBN6 |
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4-7 НЕДЕЛЬ
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259
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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ST MICROELECTRONICS
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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ST MICROELECTRONICS SEMI
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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272.24
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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MICRON
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8
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58.53
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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МАРОККО
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M25P10-AVMN6 |
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ИМС Flash 2,7V 1Mbit 50MHz SO8978
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4-7 НЕДЕЛЬ
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782
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M25P20-VMN6 |
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ИМС Flash 2,7V 2Mbit 50MHz SO8978
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ST MICROELECTRONICS
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M25P20-VMN6 |
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ИМС Flash 2,7V 2Mbit 50MHz SO8978
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80
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120.25
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M25P20-VMN6 |
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ИМС Flash 2,7V 2Mbit 50MHz SO8978
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Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC
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M25P20-VMN6 |
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ИМС Flash 2,7V 2Mbit 50MHz SO8978
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4-7 НЕДЕЛЬ
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690
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M25P32-VMF6 |
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ИМС Flash 2,7V 32Mbit 50MHz SOL1978
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ST MICROELECTRONICS
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M25P32-VMF6 |
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ИМС Flash 2,7V 32Mbit 50MHz SOL1978
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908.00
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M25P32-VMF6 |
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ИМС Flash 2,7V 32Mbit 50MHz SOL1978
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MICRON
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M25P32-VMF6 |
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ИМС Flash 2,7V 32Mbit 50MHz SOL1978
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КИТАЙ
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M25P32-VMF6 |
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ИМС Flash 2,7V 32Mbit 50MHz SOL1978
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4-7 НЕДЕЛЬ
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532
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M27C1001-15F1 |
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ST MICROELECTRONICS
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M27C1001-15F1 |
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193.40
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M27C1001-15F1 |
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STMicroelectronics
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M27C1001-15F1 |
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ST MICROELECTRONICS SEMI
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M27C1001-15F1 |
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4-7 НЕДЕЛЬ
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161
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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ST MICROELECTRONICS
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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226.04
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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STMicroelectronics
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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СИНГАПУР
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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ST MICROELECTRONICS SEMI
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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ST1
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M27C1001-70F1 |
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ИМС UV-EPROM 5V
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4-7 НЕДЕЛЬ
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795
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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ST MICROELECTRONICS
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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285
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444.00
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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STMicroelectronics
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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СИНГАПУР
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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ST1
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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ST MICROELECTRONICS SEMI
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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ST MICROELECTRO
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M27C322-100F1 |
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Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
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4-7 НЕДЕЛЬ
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273
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M27C512-12F1 |
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ИМС EPROM 64KX8 120нс DIL28 UВ
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ST MICROELECTRONICS
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M27C512-12F1 |
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ИМС EPROM 64KX8 120нс DIL28 UВ
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ST MICROELECTRONICS SEMI
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M27C512-12F1 |
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ИМС EPROM 64KX8 120нс DIL28 UВ
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243.20
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M27C512-12F1 |
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ИМС EPROM 64KX8 120нс DIL28 UВ
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STMICROELECTRONICS
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