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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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AT49BV3218-90TI |
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Flash parallel 4M x 8 or 2M x 16, U=2.65 - 3.3V, 90ns, Industrial
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4-7 НЕДЕЛЬ
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422
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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ATMEL
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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ATMEL CORPORATION
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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29.12
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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США
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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СОЕДИНЕННЫЕ ШТА
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AT93C66A-10SU-2.7 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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4-7 НЕДЕЛЬ
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540
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AT93C66A-10SU-2.7 SO-8 |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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ATMEL
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AT93C66A-10SU-2.7 SO-8 09.02 - 30 Д |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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ATMEL
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AT93C66A-10SU-2.7 SO-8 24.11 - 10 Д |
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Память EEPROM 4кбит, Serial, 3-Wire, Microwire, 2.7В / 5.0В
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ATMEL
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BS62LV4006PCP-55 |
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SRAM 512KX8 55NS 5V
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ROHM
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BS62LV4006PCP-55 |
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SRAM 512KX8 55NS 5V
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BRILLIANCE SEMICONDUCTOR
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BS62LV4006PCP-55 |
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SRAM 512KX8 55NS 5V
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476.08
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BS62LV4006PCP-55 |
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SRAM 512KX8 55NS 5V
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4-7 НЕДЕЛЬ
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443
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BS62LV4006PCP-70 |
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SRAM 512K x 8 5V
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ROHM
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BS62LV4006PCP-70 |
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SRAM 512K x 8 5V
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481.92
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BS62LV4006PCP-70 |
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SRAM 512K x 8 5V
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4-7 НЕДЕЛЬ
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206
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CY7C146-25JXC |
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CYPRESS
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CY7C146-25JXC |
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826.76
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CY7C146-25JXC |
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Cypress Semiconductor Corp
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CY7C146-25JXC |
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4-7 НЕДЕЛЬ
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697
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K6R4008C1D-KI10 |
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SRAM 512K x 8 5.0V High Speed 10ns
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SAMSUNG
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K6R4008C1D-KI10 |
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SRAM 512K x 8 5.0V High Speed 10ns
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SAMSUNG
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K6R4008C1D-KI10 |
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SRAM 512K x 8 5.0V High Speed 10ns
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SAM
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K6R4008C1D-KI10 |
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SRAM 512K x 8 5.0V High Speed 10ns
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488.04
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K6R4008C1D-KI10 |
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SRAM 512K x 8 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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620
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K6R4008V1D-KI10 |
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SRAM 512K x 8, 3.3V, 10ns
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SAMSUNG
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K6R4008V1D-KI10 |
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SRAM 512K x 8, 3.3V, 10ns
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SAMSUNG
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K6R4008V1D-KI10 |
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SRAM 512K x 8, 3.3V, 10ns
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427.36
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K6R4008V1D-KI10 |
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SRAM 512K x 8, 3.3V, 10ns
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SAM
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K6R4008V1D-KI10 |
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SRAM 512K x 8, 3.3V, 10ns
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4-7 НЕДЕЛЬ
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300
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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SAMSUNG
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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SAMSUNG
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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448.76
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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SAM
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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ТАИЛАНД
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K6R4008V1D-UI10 |
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SRAM 512K x 8, 3.3V, 10ns, Pb free
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4-7 НЕДЕЛЬ
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563
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K6R4016C1D-UC10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UC10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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489.04
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K6R4016C1D-UC10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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522
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAM
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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513.40
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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КИТАЙ
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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764
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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465.48
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAM
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КИТАЙ
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