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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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K6R4016C1D-UC10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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251
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAM
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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513.40
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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КИТАЙ
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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704
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAM
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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513.40
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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КИТАЙ
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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SAMSUNG
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K6R4016C1D-UI10 |
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SRAM 256K x 16 5.0V High Speed 10ns
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4-7 НЕДЕЛЬ
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704
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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465.48
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAM
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КИТАЙ
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КОРЕЯ РЕСПУБЛИК
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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4-7 НЕДЕЛЬ
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244
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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465.48
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAM
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КИТАЙ
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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SAMSUNG
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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КОРЕЯ РЕСПУБЛИК
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K6R4016V1D-UI10 |
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Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
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4-7 НЕДЕЛЬ
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244
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K6X1008C2D-BF55 |
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SRAM 128K x 8, 5.0V
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SAMSUNG
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6
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588.00
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K6X1008C2D-BF55 |
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SRAM 128K x 8, 5.0V
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434.00
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K6X1008C2D-BF55 |
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SRAM 128K x 8, 5.0V
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SAMSUNG
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K6X1008C2D-BF55 |
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SRAM 128K x 8, 5.0V
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4-7 НЕДЕЛЬ
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796
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K6X1008C2D-PF55 |
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SRAM 128K x 8, 5.0V, 70ns
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SAMSUNG
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K6X1008C2D-PF55 |
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SRAM 128K x 8, 5.0V, 70ns
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5
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248.40
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K6X1008C2D-PF55 |
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SRAM 128K x 8, 5.0V, 70ns
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SAM
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K6X1008C2D-PF55 |
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SRAM 128K x 8, 5.0V, 70ns
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4-7 НЕДЕЛЬ
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527
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K6X1008C2D-TF55T |
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SAMSUNG
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K6X1008C2D-TF55T |
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324.00
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K6X1008C2D-TF55T |
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4-7 НЕДЕЛЬ
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430
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K6X1008T2D-BF70 |
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SRAM 128K x 8, 3.3V, 70ns
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SAMSUNG
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K6X1008T2D-BF70 |
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SRAM 128K x 8, 3.3V, 70ns
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SAMSUNG
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240
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K6X1008T2D-BF70 |
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SRAM 128K x 8, 3.3V, 70ns
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277.72
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K6X1008T2D-BF70 |
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SRAM 128K x 8, 3.3V, 70ns
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SAM
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K6X1008T2D-BF70 |
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SRAM 128K x 8, 3.3V, 70ns
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4-7 НЕДЕЛЬ
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468
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K6X1008T2D-PF70 |
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SRAM 128K x 8, 3.3V, -40..+85C low power
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SAMSUNG
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K6X1008T2D-PF70 |
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SRAM 128K x 8, 3.3V, -40..+85C low power
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204.96
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K6X1008T2D-PF70 |
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SRAM 128K x 8, 3.3V, -40..+85C low power
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4-7 НЕДЕЛЬ
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715
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K6X4008C1F-BF55 |
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Статическая память (SRAM) (512K x 8 bit, 55 ns, Isb
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SAMSUNG
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K6X4008C1F-BF55 |
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Статическая память (SRAM) (512K x 8 bit, 55 ns, Isb
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323.00
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K6X4008C1F-BF55 |
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Статическая память (SRAM) (512K x 8 bit, 55 ns, Isb
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SAMSUNG
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K6X4008C1F-BF55 |
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Статическая память (SRAM) (512K x 8 bit, 55 ns, Isb
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SAM
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