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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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TLC549CDG4 |
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4-7 НЕДЕЛЬ
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338
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845HN-1A-C 05VDC |
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176.00
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FINDER 60.12.4.031.0040 |
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FQA34N20 |
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FAIR
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FQA34N20 |
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392.00
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FQA34N20 |
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Fairchild Semiconductor
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IRFBC40S |
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VISHAY
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IRFBC40S |
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1
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290.45
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IRFBC40S |
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Vishay/Siliconix
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74HC4050N |
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NXP
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74HC4050N |
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74HC4050N |
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4-7 НЕДЕЛЬ
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541
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BD136-BP |
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48
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14.40
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BD136-BP |
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MCC
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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18
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16.23
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS
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10 592
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21.34
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS SEMI
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTRONICS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИНДИЯ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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PILIPINES
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRO
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHANGJIANG
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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KLS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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HOTTECH
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960
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10.07
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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NXP
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560
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3.38
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHINA
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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JSCJ
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13 572
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8.02
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИМОРТ
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BPW20RF |
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Фототранзистор инфракрачный
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VISHAY
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1 057
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493.39
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BPW20RF |
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Фототранзистор инфракрачный
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Vishay/Semiconductors
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BPW20RF |
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Фототранзистор инфракрачный
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233
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550.68
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BTA06-600TRG |
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ST MICROELECTRONICS
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140
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49.88
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BTA06-600TRG |
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STMicroelectronics
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BTA06-600TRG |
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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DIODES
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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DC COMPONENTS
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51 805
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3.76
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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MCC
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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3
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15.12
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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WTE
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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GALAXY
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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YJ
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336
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4.13
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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ТАЙВАНЬ(КИТАЙ)
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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КИТАЙ
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HER208 |
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Ультрабыстрый диод 1000V, 2A, 30pF, < 75nS
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MIC
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12 243
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2.26
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