BAS16H,115
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Версия для печати
| Current - Reverse Leakage @ Vr | 500nA @ 80V |
| Current - Average Rectified (Io) | 215mA (DC) |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Diode Type | Standard |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4ns |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOD-123F |
| Корпус | SOD123F |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BT137S-600D.118 | WEEN/NXP |
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| BT137S-600D.118 | 992 | 16.34 | ||||||
| BT137S-600D.118 | WEEN | 208 | 23.25 | |||||
| FYLS-0603BUGC | FORYARD | 46 428 | 4.71 | |||||
| FYLS-0603BUGC |
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| MMSZ5231B | FAIR |
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| MMSZ5231B | FAIRCHILD |
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| MMSZ5231B | FAIRCHILD |
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| MMSZ5231B | Fairchild Semiconductor |
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| MMSZ5231B | YJ | 404 386 |
1.30 >100 шт. 0.65 |
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| MMSZ5231B | YT |
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| MMSZ5231B | 40 000 |
1.38 >100 шт. 0.69 |
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| MMSZ5231B | DIOTEC | 1 753 | 1.05 | |||||
| MMSZ5231B | ONS |
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| MMSZ5231B | YANGJIE |
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| MMSZ5231B | YANGJIE (YJ) |
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| MMSZ5231B | YANGZHOU YANGJIE |
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| MMSZ5231B | KEEN SIDE | 748 |
1.50 >100 шт. 0.75 |
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| MMSZ5231B | KLS | 4 800 | 1.13 | |||||
| MMSZ5231B | CDIL | 84 | 9.10 | |||||
| MMSZ5256BT1G | ON SEMICONDUCTOR |
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| MMSZ5256BT1G | ON SEMICONDUCTOR | 2 917 |
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| MMSZ5256BT1G | ONS |
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| MMSZ5256BT1G |
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| TKR4R7M2GG13M | JAMICON |
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| TKR4R7M2GG13M |
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