| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 10.8A |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.5A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 2670pF @ 20V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
Версия для печати
