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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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15.30
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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956
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5.66
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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4 867
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3.38
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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9.20
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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4 492
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1.92
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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12 000
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1.24
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2SB688 |
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Биполярный транзистор Si-P, 120V, 8A, 80W, 10MHz
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33.88
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2SB688 |
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Биполярный транзистор Si-P, 120V, 8A, 80W, 10MHz
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KEC
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2SB688 |
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Биполярный транзистор Si-P, 120V, 8A, 80W, 10MHz
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INCHANGE SEMIC
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2SB688 |
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Биполярный транзистор Si-P, 120V, 8A, 80W, 10MHz
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ISC
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162
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210.20
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2SB688 |
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Биполярный транзистор Si-P, 120V, 8A, 80W, 10MHz
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ISCSEMI
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2SC4467 |
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Биполярный транзистор NPN , 120В, 8A, 80Вт, 20МГц (Comp. 2SA1694)
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SANKEN
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2SC4467 |
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Биполярный транзистор NPN , 120В, 8A, 80Вт, 20МГц (Comp. 2SA1694)
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SK
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2SC4467 |
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Биполярный транзистор NPN , 120В, 8A, 80Вт, 20МГц (Comp. 2SA1694)
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1
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295.20
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2SC4467 |
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Биполярный транзистор NPN , 120В, 8A, 80Вт, 20МГц (Comp. 2SA1694)
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КИТАЙ
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2SC4467 |
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Биполярный транзистор NPN , 120В, 8A, 80Вт, 20МГц (Comp. 2SA1694)
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ISCSEMI
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FAIR
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FSC
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FAI/QTC
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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3 280
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27.42
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FAIRCHILD
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FAIRCHILD
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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Fairchild Semiconductor
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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FSC1
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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КИТАЙ
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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ON SEMI/FAIRCH
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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ONSEMICONDUCTOR
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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ONS
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FQP50N06 |
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Силовой транзистор N-MOS 60V, 50A, 120W
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ONS-FAIR
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LNK362PN |
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Интегральный Преобразователь Uвх 85:265VAC Pвых2,6W Umax 700V Imax 150mA
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PI
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LNK362PN |
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Интегральный Преобразователь Uвх 85:265VAC Pвых2,6W Umax 700V Imax 150mA
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LNK362PN |
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Интегральный Преобразователь Uвх 85:265VAC Pвых2,6W Umax 700V Imax 150mA
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Power Integrations
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LNK362PN |
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Интегральный Преобразователь Uвх 85:265VAC Pвых2,6W Umax 700V Imax 150mA
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PWR
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LNK362PN |
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Интегральный Преобразователь Uвх 85:265VAC Pвых2,6W Umax 700V Imax 150mA
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1
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