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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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2 640
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16.00
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS
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428
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14.46
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS SEMI
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTRONICS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИНДИЯ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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PILIPINES
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRO
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHANGJIANG
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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KLS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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HOTTECH
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32
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4.31
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHINA
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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JSCJ
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5 257
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16.03
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИМОРТ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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NXP
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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RUME
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118
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3.84
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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TRR
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4 800
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3.96
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BLM21PG331SN1D |
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Чип-дроссель SMD 0805 (Импеданс на 100MHz=330Ohm, Idc=1.5A, T=-55 to +125C)
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MURATA
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6 304
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3.02
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BLM21PG331SN1D |
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Чип-дроссель SMD 0805 (Импеданс на 100MHz=330Ohm, Idc=1.5A, T=-55 to +125C)
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MUR
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473 652
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4.34
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BLM21PG331SN1D |
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Чип-дроссель SMD 0805 (Импеданс на 100MHz=330Ohm, Idc=1.5A, T=-55 to +125C)
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MURATA
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BLM21PG331SN1D |
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Чип-дроссель SMD 0805 (Импеданс на 100MHz=330Ohm, Idc=1.5A, T=-55 to +125C)
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161
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1.84
>100 шт. 0.92
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BV EI 382 1186 |
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HAHN
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BV EI 382 1194 |
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HAHN
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GRM2165C1H471JA01D |
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Керамический конденсатор 470 пФ 50 В
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MURATA
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52
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2.07
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GRM2165C1H471JA01D |
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Керамический конденсатор 470 пФ 50 В
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MURATA
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GRM2165C1H471JA01D |
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Керамический конденсатор 470 пФ 50 В
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Murata Electronics North America
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GRM2165C1H471JA01D |
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Керамический конденсатор 470 пФ 50 В
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MUR
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4 061
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1.23
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GRM2165C1H471JA01D |
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Керамический конденсатор 470 пФ 50 В
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Версия для печати
