JFET N-CH 25V 30MA SOT23 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 10V |
Drain to Source Voltage (Vdss) | 25V |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | 25V |
Voltage - Cutoff (VGS off) @ Id | 1V @ 1µA |
Input Capacitance (Ciss) @ Vds | 5pF @ 10V |
Resistance - RDS(On) | 50 Ohm |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | TO-236AB |
Power - Max | 250mW |
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
LM337LZ | NATIONAL SEMICONDUCTOR | |||||||
LM337LZ | 4 | 79.20 | ||||||
LM337LZ | NSC | |||||||
LM337LZ | NATIONAL SEMICONDUCTOR | |||||||
LM337LZ | ВЕЛИКОБРИТАНИЯ | |||||||
LM337LZ | TEXAS INSTRUMENTS | |||||||
LM337LZ | NS | |||||||
LM337LZ | TEXAS | |||||||
MMBF4392LT1G | N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ON SEMICONDUCTOR | ||||||
MMBF4392LT1G | N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | 88.40 | ||||||
MMBF4392LT1G | N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ON SEMICONDUCTOR | ||||||
MMBF4392LT1G | N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ONS | ||||||
NCP301LSN30T1G | ONS | |||||||
NCP301LSN30T1G | ON Semiconductor | |||||||
NCP301LSN30T1G | ON SEMICONDUCTOR | 15 | ||||||
NCP301LSN30T1G | ||||||||
NCP803SN293T1G | ON Semiconductor | |||||||
NCP803SN293T1G | ONS | |||||||
NCP803SN293T1G | ON SEMICONDUCTOR | |||||||
NCP803SN293T1G | ||||||||
STM6315SDW13F | ST MICROELECTRONICS | |||||||
STM6315SDW13F | STMicroelectronics | |||||||
STM6315SDW13F | ||||||||
STM6315SDW13F | ST MICROELECTRONICS SEMI | 27 |
|