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 Версия для печати
Версия для печати
                        
                        
                    
                                | FET Feature | Logic Level Gate | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| Серия | HEXFET® | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 14A, 10V | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25° C | 14A | 
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | 
| Gate Charge (Qg) @ Vgs | 12nC @ 4.5V | 
| Input Capacitance (Ciss) @ Vds | 1040pF @ 15V | 
| Power - Max | 2.5W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) | 
| Корпус | 8-SO | 
| IRF8721PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel 
                                        Производитель: 
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