IRF7210TRPBF
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Vgs(th) (Max) @ Id | 600mV @ 500µA |
| Gate Charge (Qg) @ Vgs | 212nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 17179pF @ 10V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| LM431AIM3/NOPB | NSC |
|
|
|||||
| LM431AIM3/NOPB | National Semiconductor |
|
|
|||||
| LM431AIM3/NOPB | NATIONAL SEMIC |
|
|
|||||
| LM431AIM3/NOPB |
|
|
||||||
| LM431AIM3/NOPB | TEXAS INSTRUMENTS | 768 | 69.37 | |||||
| LM431AIM3/NOPB | TEXAS |
|
|
|||||
 |
 |
MAX3221EAE | MAXIM |
|
|
|||
|
|
|
MAX3221EAE | 312 | 122.40 | ||||
|
|
|
MAX3221EAE | MAX |
|
|
|||
| SN65HVD232DR | TEXAS INSTRUMENTS |
|
|
|||||
| SN65HVD232DR | TEXAS INSTRUMENTS | 620 |
|
|||||
| SN65HVD232DR | TEXAS |
|
|
|||||
| SN65HVD232DR | 1 246 | 121.25 | ||||||
| SN65HVD232DR | ТI |
|
|
|||||
| SN74LVC1G06DCKR | TEXAS INSTRUMENTS |
|
|
|||||
| SN74LVC1G06DCKR | TEXAS INSTRUMENTS | 3 188 |
|
|||||
| SN74LVC1G06DCKR | TEXAS |
|
|
|||||
| SN74LVC1G06DCKR |
|
|
||||||
|
|
SN74LVC1G08DCKR |
|
18.60 | |||||
|
|
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 800 | 12.79 | ||||
|
|
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 10 892 |
|
||||
|
|
SN74LVC1G08DCKR | TEXAS |
|
|
||||
|
|
SN74LVC1G08DCKR | YOUTAI | 12 588 | 3.84 | ||||
|
|
SN74LVC1G08DCKR | UMW | 288 | 5.90 | ||||
|
|
SN74LVC1G08DCKR | UMW-YOUTAI |
|
|
