MMUN2113LT1G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 400mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change 14/Oct/2008 Possible Adhesion Issue 11/July/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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|---|---|---|---|---|---|---|---|---|
| 1SMA5921BT3G | ONS | 8 059 | 16.00 | |||||
| 1SMA5921BT3G | ON Semiconductor |
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| 1SMA5921BT3G | TOOHONG | 460 | 12.51 | |||||
| BC817.215 | NXP | 756 | 1.49 | |||||
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| BC817.215 | NEX-NXP |
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| BCR112E6327 | INFINEON | 170 | 5.96 | |||||
| BCR112E6327 |
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| BCR112E6327 | INFINEON | 948 |
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BZV55-C27,115 |
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NXP Semiconductors |
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BZV55-C27,115 |
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NXP |
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BZV55-C27,115 |
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NEX |
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTOR |
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | ONS | 8 614 | 11.37 | ||
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | 1 000 | 13.12 | |||
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTOR | 94 |
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | ONSEMICONDUCTOR |
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTO |
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | TECH PUB | 86 648 | 6.86 | ||
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NUP2105LT1G |
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IC CAN BUS PROTECTOR DUAL SOT23 | DOWO |
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