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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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MICRO SEMICONDUCTOR
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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EIC
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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ON SEMICONDUCTOR
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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DC COMPONENTS
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1 888
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15.65
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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SMK
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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DIOTEC
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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ST MICROELECTRONICS
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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ONS
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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26
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46.80
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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OTHER
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3
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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DIOTEC SEMICONDUCTOR
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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Microsemi Commercial Components Group
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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MULTICOMP
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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KLS
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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HOTTECH
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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MIC
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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1
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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SUNTAN
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
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LGE
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1 286
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8.95
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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15.30
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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4 495
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5.93
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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10 982
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2.92
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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12 002
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1.13
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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4 352
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1.94
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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19 200
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1.31
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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MICRO CHIP
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40
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214.20
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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392
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193.60
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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MICRO CHIP
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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Microchip Technology
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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ТАИЛАНД
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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ATMEL
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PIC12F629-I/P |
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Микроконтроллер 8-ми разрядный, с Flash/EEPROM (1x14K Flash, 8 I/O, 64x8b RAM, 128x8b ...
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1
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SF26 |
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Ультрабыстрый диод 400V 2A
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SEMTECH
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SF26 |
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Ультрабыстрый диод 400V 2A
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18.32
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SF26 |
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Ультрабыстрый диод 400V 2A
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GALAXY
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SF26 |
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Ультрабыстрый диод 400V 2A
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КИТАЙ
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266
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15.30
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SF26 |
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Ультрабыстрый диод 400V 2A
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YJ
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2 400
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3.94
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SF26 |
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Ультрабыстрый диод 400V 2A
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MIC
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136
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2.32
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SF26 |
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Ультрабыстрый диод 400V 2A
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GALAXY ME
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SF26 |
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Ультрабыстрый диод 400V 2A
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YANGJIE
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8 800
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3.77
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SF26 |
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Ультрабыстрый диод 400V 2A
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YANGJIE (YJ)
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SF26 T/B |
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SEMTECH
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SF26 T/B |
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DC COMPONENTS
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328
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4.97
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SF26 T/B |
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8.24
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