FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 34A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 56A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2430pF @ 25V |
Power - Max | 110W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
IRFR2405 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
1N4007 | DC COMPONENTS | 129 018 | 1.86 | |||||
1N4007 | GENERAL SEMICONDUCTOR | |||||||
1N4007 | LITE ON OPTOELECTRONICS | |||||||
1N4007 | PANJIT | |||||||
1N4007 | FSC | |||||||
1N4007 | MCC | |||||||
1N4007 | DIC | |||||||
1N4007 | FAIR | |||||||
1N4007 | PHILIPS | |||||||
1N4007 | MIC | 222 684 | 1.48 | |||||
1N4007 | DIOTEC | 54 468 | 3.16 | |||||
1N4007 | ON SEMICONDUCTOR | |||||||
1N4007 | LD | |||||||
1N4007 | JGD | |||||||
1N4007 | MING SHUN | |||||||
1N4007 | MS | |||||||
1N4007 | QUAN-HONG | |||||||
1N4007 | XR | |||||||
1N4007 | GALAXY | |||||||
1N4007 | COMPACT TECHNOLOGY | |||||||
1N4007 | DC COMPONENTS | |||||||
1N4007 | FAIRCHILD | 288 | ||||||
1N4007 | GENERAL SEMICONDUCTOR | 1 | ||||||
1N4007 | LITE ON OPTOELECTRONICS | |||||||
1N4007 | MASTER INSTRUMENT CORPORATION | |||||||
1N4007 | MICRO SEMICONDUCTOR(MICROSEMI) | |||||||
1N4007 | ON SEMICONDUCTOR | |||||||
1N4007 | PANJIT | 307 692 | ||||||
1N4007 | PHILIPS | |||||||
1N4007 | TAIWAN SEMICONDUCTOR MANF. | |||||||
1N4007 | YANGJIE SEMICONDUCT | |||||||
1N4007 | Fairchild Semiconductor | |||||||
1N4007 | SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD | |||||||
1N4007 | MICROSEMI CORP | |||||||
1N4007 | ТАЙВАНЬ(КИТАЙ) | |||||||
1N4007 | GD | |||||||
1N4007 | JC | |||||||
1N4007 | KINGTRONICS | |||||||
1N4007 | YJ | 133 779 | 1.30 | |||||
1N4007 | DIODES INC. | |||||||
1N4007 | MIG | |||||||
1N4007 | MICRO COMMERCIAL COMPONENTS | |||||||
1N4007 | MOTOROLA | |||||||
1N4007 | YJ ELE-NIC CORP | |||||||
1N4007 | RECTIFIER | |||||||
1N4007 | EXTRA COM-NTS | |||||||
1N4007 | GALAXY ELECTRICAL | |||||||
1N4007 | GEMBIRD | |||||||
1N4007 | ТОМИЛИНО | |||||||
1N4007 | EXTRA | |||||||
1N4007 | КИТАЙ | 800 | 6.12 | |||||
1N4007 | DIOTEC SEMICONDUCTOR | |||||||
1N4007 | MD | |||||||
1N4007 | 39 407 |
1.64 >100 шт. 0.82 |
||||||
1N4007 | ONS-FAIR | |||||||
1N4007 | ONS | |||||||
1N4007 | ELZET | |||||||
1N4007 | GALAXY ME | |||||||
1N4007 | LGE | 832 | 1.75 | |||||
1N4007 | HOTTECH | 95 471 | 1.28 | |||||
1N4007 | KLS | 78 400 | 2.95 | |||||
1N4007 | YS | |||||||
1N4007 | YANGJIE | 151 200 | 1.57 | |||||
1N4007 | YANGJIE (YJ) | |||||||
1N4007 | MC | |||||||
1N4007 | FAIRCHILD | |||||||
1N4007 | WUXI XUYANG | 120 | 2.02 | |||||
1N4007 | KUU | 2 |
1.12 >100 шт. 0.56 |
|||||
1N4007 | CHINA | 15 317 | 1.02 | |||||
1N4007 | SUNRISETRON | |||||||
1N4007 | UNKNOWN | |||||||
1N4007 | BILIN | |||||||
1N4007 | KEHE | |||||||
1N4007 | 1 | |||||||
1N4007 | BL | |||||||
1N4007 | SUNTAN | 148 047 | 2.04 | |||||
1N4007 | TWGMC | 1 |
1.02 >100 шт. 0.51 |
|||||
1N4007 | CTK | 72 | 1.58 | |||||
BTS452R | INFINEON | |||||||
BTS452R | 192.00 | |||||||
BTS452R | Infineon Technologies | |||||||
BTS452R | INFINEON TECH | |||||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INTERNATIONAL RECTIFIER | ||||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | 2 320 | 22.67 | |||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INTERNATIONAL RECTIFIER | 6 | |||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | INFINEON | ||||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | IR/VISHAY | ||||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | SLKOR | 7 960 | 34.80 | ||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | JSMICRO | 7 108 | 34.66 | ||||
IRFR5305 | Полевой транзистор P-канальный (Vds=55V, Id=31A@T=25C, Id=22A@T=100C, Rds=0.065 ... | EVVO | 1 075 | 23.52 | ||||
LM2931CM | NATIONAL SEMICONDUCTOR | |||||||
LM2931CM | 7 | 68.40 | ||||||
LM2931CM | NSC | |||||||
LM2931CM | NATIONAL SEMICONDUCTOR | 140 | ||||||
LM2931CM | МАЛАЙЗИЯ | |||||||
LM2931CM | TEXAS INSTRUMENTS | |||||||
LM2931CM | 1 | |||||||
TLE4264G | INFINEON | |||||||
TLE4264G | 147.60 | |||||||
TLE4264G | Infineon Technologies | |||||||
TLE4264G | INFINEON | |||||||
TLE4264G | INFINEON TECH | |||||||
TLE4264G | SIEMENS |
|