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Корпус | PG-SOT23-3 |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Тип монтажа | Поверхностный |
Power - Max | 360mW |
Input Capacitance (Ciss) @ Vds | 78pF @ 25V |
Gate Charge (Qg) @ Vgs | 2.5nC @ 10V |
Vgs(th) (Max) @ Id | 2.3V @ 50µA |
Current - Continuous Drain (Id) @ 25° C | 170mA |
Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BSS119 SIPMOS Small-Signal Transistor (N channel Enhancement mode)
Производитель:
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