| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Diode (Isolated) |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
Версия для печати
