IRF710
Транзистор полевой N-канальный 400В, 2А
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.2A, 10V |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 170pF @ 25V |
| Power - Max | 36W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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LXE1710 Evaluation Kit Также в этом файле: IRF7105
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 155 284 | 1.86 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC | 304 | 1.30 | ||
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 188 671 | 1.30 | ||
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1N4007 |
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DIOTEC | 56 930 | 2.70 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 312 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 266 666 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 201 080 | 1.79 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 6.12 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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1 807 | 7.04 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 20 197 | 1.78 | ||
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1N4007 |
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HOTTECH | 96 671 | 1.54 | ||
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1N4007 |
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KLS | 128 000 | 1.97 | ||
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1N4007 |
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YS |
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1N4007 |
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YANGJIE | 257 600 | 1.64 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG | 19 344 | 2.04 | ||
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1N4007 |
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KUU | 1 |
1.02 >100 шт. 0.51 |
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1N4007 |
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CHINA | 15 337 | 1.02 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 111 216 | 2.06 | ||
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1N4007 |
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TWGMC | 69 | 2.14 | ||
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICRO SEMICONDUCTOR |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MOTOROLA |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | SMK |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | DC COMPONENTS | 1 581 | 14.05 | |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | SEMICRON |
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1N5383B |
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Стабилитрон 5W, 150V, 5% |
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30.00 | ||
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICRO SEMICONDUCTOR(MICROSEMI) |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MOTOROLA | 14 |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | Microsemi Commercial Components Group |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | ON Semiconductor |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICROSEMI CORP |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | ON SEMICONDUCTOR | 82 |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | КИТАЙ |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | DIOTEC |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | INTERNATIONAL RECTIFIER |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | VISHAY |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | ВЗПП |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | 608 | 25.08 | ||
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | Vishay/Siliconix |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | STMicroelectronics |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | КИТАЙ |
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IRF830 |
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N-канальный Полевой транзистор 500В, 100Вт, 4.5А | INFINEON |
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RLB0914-102KL |
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Катушка индуктивности на ферритовом сердечнике экранированная 1мГн, 300мА, 10%, 2.1Ом | BOURNS | 136 | 52.15 | |
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RLB0914-102KL |
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Катушка индуктивности на ферритовом сердечнике экранированная 1мГн, 300мА, 10%, 2.1Ом |
|
57.60 | ||
| VS-10CTQ150PBF | VISHAY/IR |
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| VS-10CTQ150PBF | VISHAY |
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| VS-10CTQ150PBF |
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