Vgs(th) (Max) @ Id | 4V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 3.9A |
Drain to Source Voltage (Vdss) | 200V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 3.9A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | UltraFET™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2535pF @ 100V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
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