| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 500mA, 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 460mA |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 63pF @ 10V |
| Power - Max | 350mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23 |
Версия для печати
