| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.5A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 188pF @ 10V |
| Power - Max | 600mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
Версия для печати
