| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Encapsulate Change 15/May/2008 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 3.5A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Gate Charge (Qg) @ Vgs | 7.3nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 443pF @ 16V |
| Power - Max | 1.4W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
Версия для печати
