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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A, 5V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 60W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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IRLZ24 (MOSFET) HEXFET® Power MOSFET
Производитель:
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