| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 8.1 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 15V |
| Power - Max | 2.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DirectFET™ Isometric ST |
| Корпус | DIRECTFET™ ST |
| Other Related Documents | DirectFET MOSFET 4Ps Checklist |
Версия для печати
