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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | QFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 4.35A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8.7A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 450pF @ 25V |
| Power - Max | 30W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220F |
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FQPF13N10L (N-канальные транзисторные модули) 100v Logic N-channel Mosfet
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SB834Y | TOSHIBA |
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| 2SB834Y |
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| 2SB834Y | TOS |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | MATSUSHITA |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | MAT |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | 142 | 65.10 | ||
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | PAN |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | КИТАЙ |
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FQPF12P10 | FAIR |
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FQPF12P10 | FAIRCHILD |
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FQPF12P10 | FAIRCHILD |
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FQPF12P10 | Fairchild Semiconductor |
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FQPF12P10 | FSC1 |
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FQPF12P10 | FSC |
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FQPF12P10 | ONS |
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FQPF12P10 |
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IRF7469PBF |
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International Rectifier |
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IRF7469PBF |
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INFINEON |
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IRF7469PBF |
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| MMBD7000 | NATIONAL SEMICONDUCTOR |
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| MMBD7000 | NATIONAL SEMICONDUCTOR | 1 321 |
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| MMBD7000 | MCC |
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| MMBD7000 | Fairchild Semiconductor |
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| MMBD7000 | FAIRCHILD |
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| MMBD7000 | ONS |
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| MMBD7000 |
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| MMBD7000 | ONS-FAIR |
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| MMBD7000 | JSCJ | 98 040 | 1.29 |