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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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15.30
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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4 495
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5.93
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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10 982
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2.92
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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12 002
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1.13
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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4 352
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1.94
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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19 200
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1.31
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJI ELECTRIC
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80
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311.10
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJITSU
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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131.80
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJ
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJI
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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КИТАЙ
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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ISCSEMI
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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INCHANGE
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128
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519.40
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2Т913В |
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5
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612.00
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2Т913В |
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МИНСК
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46
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640.00
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2Т913В |
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ИНТЕГРАЛ
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219
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2 539.80
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2Т913В |
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ТРАНЗИСТОР
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1
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1 092.00
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ПГ-3 11П2НВ |
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