SIS412DN-T1-GE3
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 435pF @ 15V |
| Power - Max | 15.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BC858ALT1G | ON SEMICONDUCTOR |
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| BC858ALT1G | ON SEMICONDUCTOR | 15 936 |
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| BC858ALT1G | ONS |
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| BC858ALT1G |
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| CPC1018N | CPC |
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| CPC1018N |
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| CPC1018N | Clare |
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| CPC1018N | IXYS | 96 | 572.11 | |||||
| CPC1018N | LITTELFUSE |
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| CPC1018N | LTL |
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| CPC1018N | 4-7 НЕДЕЛЬ |
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KPT-1608EC |
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KINGBRIGHT |
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KPT-1608EC |
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KGB | 8 770 | 9.52 | ||
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KPT-1608EC |
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KB |
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KPT-1608EC |
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| MSP430FR5738IRGET | TEXAS INSTRUMENTS |
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| MSP430FR5738IRGET |
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| MSP430FR5738IRGET | TEXAS |
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| MSP430FR5738IRGET | 4-7 НЕДЕЛЬ |
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| NFM18PS105R0J3D | MURATA | 99 | 8.27 | |||||
| NFM18PS105R0J3D | MURATA |
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| NFM18PS105R0J3D | Murata Electronics North America |
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| NFM18PS105R0J3D | MUR | 20 031 | 5.06 | |||||
| NFM18PS105R0J3D |
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