| Current - Continuous Drain (Id) @ 25° C | 9.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 6.1 mOhm @ 14.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 24nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 24V |
| Power - Max | 860mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Wire Change 29/Aug/2008 |
Версия для печати
