Input Capacitance (Ciss) @ Vds | 465pF @ 16V |
Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.3A, 4.5V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Power - Max | 640mW |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-ChipFET™ |
Корпус | ChipFET |
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