| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
 |
 |
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FAIR
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FSC
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FAI/QTC
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
|
800
|
28.78
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FAIRCHILD
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FAIRCHILD
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
Fairchild Semiconductor
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
FSC1
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
КИТАЙ
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
ON SEMI/FAIRCH
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
ONSEMICONDUCTOR
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
ONS
|
|
|
|
|
|
|
FQP50N06 |
|
Силовой транзистор N-MOS 60V, 50A, 120W
|
ONS-FAIR
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
INTERNATIONAL RECTIFIER
|
800
|
102.00
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
NXP
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
|
761
|
21.96
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
NXP
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
DMS
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
МЕКСИКА
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
INFINEON
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
INTERNATIONAL RECTIFIER
|
17
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
1
|
|
|
|
|
|
|
IRFZ44N |
|
N-канальный Полевой транзистор (Vds=55V, Id=49A@T=25C, Id=35A@T=100C, ...
|
MINOS
|
635
|
30.00
|
|
|
|
|
LD1117DT18CTR |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
LD1117DT18CTR |
|
|
|
|
33.24
|
|
|
|
|
LD1117DT18CTR |
|
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
LD1117DT18CTR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
LD1117DT33TR |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
LD1117DT33TR |
|
|
|
|
58.00
|
|
|
|
|
LD1117DT33TR |
|
|
ST MICROELECTRONICS SEMI
|
60
|
|
|
|
|
|
LD1117DT33TR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
LD1117DT33TR |
|
|
ST1
|
|
|
|
|
|
|
LD1117DT33TR |
|
|
ST MICROELECTRO
|
|
|
|
|
|
|
LD1117DT33TR |
|
|
STMICROELECTR
|
|
|
|
|
|
|
TDA7384 |
|
УHЧ 4x25W BTL (14.4V/4 Ом), max 4x33W, Gv=26dB
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
TDA7384 |
|
УHЧ 4x25W BTL (14.4V/4 Ом), max 4x33W, Gv=26dB
|
|
|
383.96
|
|
|
|
|
TDA7384 |
|
УHЧ 4x25W BTL (14.4V/4 Ом), max 4x33W, Gv=26dB
|
МАЛАЙЗИЯ
|
|
|
|
|
|
|
TDA7384 |
|
УHЧ 4x25W BTL (14.4V/4 Ом), max 4x33W, Gv=26dB
|
ST1
|
|
|
|
|
|
|
TDA7384 |
|
УHЧ 4x25W BTL (14.4V/4 Ом), max 4x33W, Gv=26dB
|
STMICROELECTR
|
|
|
|
Версия для печати
