|
Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 9.3 mOhm @ 30A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 9200pF @ 25V |
| Power - Max | 2.4W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
SUP90P06-09L (MOSFET) P-Channel 60-V (D-S) 175C MOSFET
Производитель:
|