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Версия для печати
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| Power - Max | 110W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Long Leads, IPak, TO-251AB |
| Корпус | I-Pak |
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STU150N3LLH6 (MOSFET) N-channel 30 V, 0.0024 ? , 80 A, IPAK STripFET™ VI DeepGATE™ Power MOSFET
Производитель:
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