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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 21A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 59A |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1210pF @ 15V |
| Power - Max | 57W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-262-3 (Straight Leads) |
| Корпус | TO-262 |
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IRF3707ZCL (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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